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1

SrO capping effect for La2O3/Ce-silicate gate dielectrics

K. Kakushima, K. Okamoto, T. Koyanagi, M. Kouda, K. Tachi, T. Kawanago, J. Song, P. Ahmet, H. Nohira, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

Journal:

Microelectronics Reliability

Année:

2010

Langue:

english

Fichier:

PDF, 275 KB

english, 2010

2

Interface and electrical properties of La-silicate for direct contact of high-k with silicon

K. Kakushima, K. Tachi, M. Adachi, K. Okamoto, S. Sato, J. Song, T. Kawanago, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

Journal:

Solid-State Electronics

Année:

2010

Langue:

english

Fichier:

PDF, 576 KB

english, 2010

3

Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process

T. Kawanago, T. Suzuki, Y. Lee, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

Journal:

Solid-State Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 820 KB

english, 2012

4

Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs

T. Kawanago, Y. Lee, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

Journal:

Solid-State Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 457 KB

english, 2012

5

Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown

E. Miranda, T. Kawanago, K. Kakushima, J. Suñé, H. Iwai

Journal:

Microelectronics Reliability

Année:

2012

Langue:

english

Fichier:

PDF, 526 KB

english, 2012

6

Comparative study of electrical characteristics in (100) and (110) surface-oriented nMOSFETs with direct contact La-silicate/Si interface structure

Kawanago, T., Kakushima, K., Ahmet, P., Kataoka, Y., Nishiyama, A., Sugii, N., Tsutsui, K., Natori, K., Hattori, T., Iwai, H.

Journal:

Solid-State Electronics

Année:

2013

Langue:

english

Fichier:

PDF, 703 KB

english, 2013

7

Codimension-m Bifurcation Theorems Applicable to the Numerical Verification Methods

Kawanago, Tadashi

Journal:

Advances in Numerical Analysis

Année:

2013

Langue:

english

Fichier:

PDF, 194 KB

english, 2013

8

La2O3 gate dielectrics for AlGaN/GaN HEMT

Chen, J., Kawanago, T., Wakabayashi, H., Tsutsui, K., Iwai, H., Nohata, D., Nohira, H., Kakushima, K.

Journal:

Microelectronics Reliability

Année:

2016

Langue:

english

Fichier:

PDF, 765 KB

english, 2016

9

Periodic tidal flow analysis by finite element perturbation method

Matsuto Kawahara, Ken'ichi Hasegawa, Yoshio Kawanago

Journal:

Computers & Fluids

Année:

1977

Langue:

english

Fichier:

PDF, 734 KB

english, 1977

10

Experimental study for high effective mobility with directly deposited HfO2/La2O3 MOSFET

T. Kawanago, J. Song, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

Journal:

Microelectronic Engineering

Année:

2009

Langue:

english

Fichier:

PDF, 474 KB

english, 2009

11

Selection of rare earth silicates for highly scaled gate dielectrics

K. Kakushima, K. Okamoto, T. Koyanagi, M. Kouda, K. Tachi, T. Kawanago, J. Song, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

Journal:

Microelectronic Engineering

Année:

2010

Langue:

english

Fichier:

PDF, 306 KB

english, 2010

12

Band bending measurement of HfO2/SiO2/Si capacitor with ultra-thin La2O3 insertion by XPS

K. Kakushima, K. Okamoto, M. Adachi, K. Tachi, J. Song, S. Sato, T. Kawanago, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

Journal:

Applied Surface Science

Année:

2008

Langue:

english

Fichier:

PDF, 577 KB

english, 2008

13

Improved convergence theorems of Newton's method designed for the numerical verification for solutions of differential equations

Tadashi Kawanago

Journal:

Journal of Computational and Applied Mathematics

Année:

2007

Langue:

english

Fichier:

PDF, 197 KB

english, 2007

14

Electrical characterization of directly deposited La-Sc oxides complex for gate insulator application

T. Kawanago, K. Tachi, J. Song, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

Journal:

Microelectronic Engineering

Année:

2007

Langue:

english

Fichier:

PDF, 360 KB

english, 2007

15

Computer assisted proof to symmetry-breaking bifurcation phenomena in nonlinear vibration

Tadashi Kawanago

Journal:

Japan Journal of Industrial and Applied Mathematics

Année:

2004

Langue:

english

Fichier:

PDF, 1.38 MB

english, 2004

16

A symmetry-breaking bifurcation theorem and some related theorems applicable to maps having unbounded derivatives

Tadashi Kawanago

Journal:

Japan Journal of Industrial and Applied Mathematics

Année:

2004

Langue:

english

Fichier:

PDF, 1.02 MB

english, 2004

17

Erratum to: A Symmetry-Breaking Bifurcation Theorem and Some Related Theorems Applicable to Maps Having Unbounded Derivatives

Tadashi Kawanago

Journal:

Japan Journal of Industrial and Applied Mathematics

Année:

2005

Fichier:

PDF, 66 KB

2005

18

EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature

Kawanago, T., Yeonghun Lee, Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., Iwai, H.

Journal:

IEEE Transactions on Electron Devices

Année:

2012

Langue:

english

Fichier:

PDF, 912 KB

english, 2012

19

Covalent Nature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal

Kawanago, T., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., Iwai, H.

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 464 KB

english, 2012

20

Analysis and Simulation of the Postbreakdown $I-V$ Characteristics of n-MOS Transistors in the Linear Response Regime

Miranda, Enrique A., Kawanago, Takamasa, Kakushima, Kuniyuki, Sune, Jordi, Iwai, Hiroshi

Journal:

IEEE Electron Device Letters

Année:

2013

Langue:

english

Fichier:

PDF, 342 KB

english, 2013

21

Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT

Kawanago, Takamasa, Kakushima, Kuniyuki, Kataoka, Yoshinori, Nishiyama, Akira, Sugii, Nobuyuki, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Natori, Kenji, Iwai, Hiroshi

Journal:

IEEE Transactions on Electron Devices

Année:

2014

Langue:

english

Fichier:

PDF, 1.72 MB

english, 2014

22

Modeling of the output characteristics of advanced n-MOSFETs after a severe gate-to-channel dielectric breakdown

Miranda, E., Kawanago, T., Kakushima, K., Suñé, J., Iwai, H.

Journal:

Microelectronic Engineering

Année:

2013

Langue:

english

Fichier:

PDF, 507 KB

english, 2013

23

Bilayer gate dielectric study by scanning tunneling microscopy

Ong, Y. C., Ang, D. S., Pey, K. L., O’Shea, S. J., Goh, K. E. J., Troadec, C., Tung, C. H., Kawanago, T., Kakushima, K., Iwai, H.

Journal:

Applied Physics Letters

Année:

2007

Langue:

english

Fichier:

PDF, 566 KB

english, 2007

24

[IEEE 2013 2nd International Symposium on Next-Generation Electronics (ISNE 2013) - Kaohsiung (2013.2.25-2013.2.26)] 2013 International Symposium on Next-Generation Electronics - Electrical and infrared absorption studies on La-silicate/Si interface

Seki, T., Kawanago, T., Kakushima, K., Ahmet, P., Kataoka, Y., Nishiyama, A., Sugii, N., Tsutsui, K., Natori, K., Hattori, T., Iwai, H.

Année:

2013

Langue:

english

Fichier:

PDF, 381 KB

english, 2013

25

[IEEE ESSDERC 2011 - 41st European Solid State Device Research Conference - Helsinki, Finland (2011.09.12-2011.09.16)] 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) - Metal inserted poly-Si with high temperature annealing for achieving EOT of 0.62nm in La-silicate MOSFET

Kawanago, T., Lee, Y., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., Iwai, H.

Année:

2011

Langue:

english

Fichier:

PDF, 414 KB

english, 2011

26

A quick signal of starvation induced autophagy: Transcription versus post-translational modification of LC3

Karim, Md. Razaul, Kawanago, Hisayo, Kadowaki, Motoni

Journal:

Analytical Biochemistry

Année:

2014

Langue:

english

Fichier:

PDF, 1.06 MB

english, 2014

27

Measurement of submilliwatt, picosecond terahertz emission from a femtosecond-laser-pumped solid-state dc to ac radiation converter based on a ZnSe crystal

Yugami, Noboru, Ohata, Nobuo, Yaegashi, Kenta, Kawanago, Hiroshi

Journal:

Review of Scientific Instruments

Année:

2006

Langue:

english

Fichier:

PDF, 327 KB

english, 2006

28

Plasma Components and Hepatic Insulin-like Growth Factor Expression Indicate Nutritional Status in Yellowtail Seriola quinqueradiata

Kawanago, M., Takemura, S., Ishizuka, R., Shioya, I.

Journal:

North American Journal of Aquaculture

Année:

2014

Langue:

english

Fichier:

PDF, 140 KB

english, 2014

29

[IEEE 2009 Proceedings of the European Solid State Device Research Conference (ESSDERC) - Athens, Greece (2009.09.14-2009.09.18)] 2009 Proceedings of the European Solid State Device Research Conference - Selection of rare earth silicate with SrO capping for EOT scaling below 0.5 nm

Kakushima, K., Okamoto, K., Koyanagi, T., Tachi, K., Kouda, M., Kawanago, T., Song, J., Ahmet, P., Tsutsui, K., Sugii, N., Hattori, T., Iwai, H.

Année:

2009

Langue:

english

Fichier:

PDF, 1.32 MB

english, 2009

30

[IEEE Technical Digest., International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1988)] Technical Digest., International Electron Devices Meeting - 3-dimensional stacked capacitor cell for 16 M and 64 M DRAMS

Ema, T., Kawanago, S., Nishi, T., Yoshida, S., Nishibe, H., Yabu, T., Kodama, Y., Nakano, T., Taguchi, M.

Année:

1988

Fichier:

PDF, 323 KB

1988

31

[IEEE IEEE 1995 Custom Integrated Circuits Conference - Santa Clara, CA, USA (1-4 May 1995)] Proceedings of the IEEE 1995 Custom Integrated Circuits Conference - An ATM chip set for high performance computer interfaces, affording over 100 Mbps sustained throughput

Tomimitsu, Y., Kawanago, S., Yamane, H., Kobunaya, H., Ohgane, S., Mizukoshi, N., Suzuki, H.

Année:

1995

Langue:

english

Fichier:

PDF, 395 KB

english, 1995

32

[IEEE 2013 Spanish Conference on Electron Devices (CDE) - Valladolid, Spain (2013.02.12-2013.02.14)] 2013 Spanish Conference on Electron Devices - Modeling of the post-breakdown IG-VG-VD characteristics of La2O3-based MOS transistors

Miranda, E., Sune, J., Kawanago, T., Kakushima, K., Iwai, H.

Année:

2013

Langue:

english

Fichier:

PDF, 220 KB

english, 2013

33

Surface acoustic wave parametric generation with pumping of light

Nakagawa, Yasuhiko, Kawanago, Satoru

Journal:

Journal of Applied Physics

Année:

1987

Langue:

english

Fichier:

PDF, 793 KB

english, 1987

34

[IEEE ESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, UK (2008.09.15-2008.09.19)] ESSDERC 2008 - 38th European Solid-State Device Research Conference - Advantage of La2O3 gate dielectric over HfO2 for direct contact and mobility improvment

Kakushima, K., Tachi, K., Adachi, M., Okamoto, K., Sato, S., Song, J., Kawanago, T., Ahmet, P., Tsutsui, K., Sugii, N., Hattori, T., Iwai, H.

Année:

2008

Langue:

english

Fichier:

PDF, 472 KB

english, 2008

35

[IEEE ESSDERC 2010 - 40th European Solid State Device Research Conference - Sevilla, Spain (2010.09.14-2010.09.16)] 2010 Proceedings of the European Solid State Device Research Conference - Optimized oxygen annealing process for Vth tuning of p-MOSFET with high-k/metal gate stacks

Kawanago, T., Lee, Y., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., Iwai, H.

Année:

2010

Langue:

english

Fichier:

PDF, 486 KB

english, 2010

36

Electronic trap characterization of the Sc[sub 2]O[sub 3]∕La[sub 2]O[sub 3] high-κ gate stack by scanning tunneling microscopy

Ong, Y. C., Ang, D. S., Pey, K. L., Wang, Z. R., O’Shea, S. J., Tung, C. H., Kawanago, T., Kakushima, K., Iwai, H.

Journal:

Applied Physics Letters

Année:

2008

Langue:

english

Fichier:

PDF, 554 KB

english, 2008

37

[IEEE 2010 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2010.06.15-2010.06.17)] 2010 Symposium on VLSI Technology - Direct contact of high-k/Si gate stack for EOT below 0.7 nm using LaCe-silicate Layer with Vfb controllability

Kakushima, K., Koyanagi, T., Kitayama, D., Kouda, M., Song, J., Kawanago, T., Mamatrishat, M., Tachi, K., Bera, M. K., Ahmet, P., Nohira, H., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori

Année:

2010

Langue:

english

Fichier:

PDF, 527 KB

english, 2010

38

[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Scaling of EOT beyond 0.5nm

Ahmet, P., Kitayama, D., Kaneda, T., Suzuki, T., Koyanagi, T., Kouda, M., Mamatrishat, M., Kawanago, T., Kakushima, K., Iwai, H.

Année:

2010

Langue:

english

Fichier:

PDF, 315 KB

english, 2010

39

Polarity dependent breakdown of the high-κ∕SiO[sub x] gate stack: A phenomenological explanation by scanning tunneling microscopy

D. S. Ang, Y. C. Ong, S. J. O’shea, K. L. Pey, C. H. Tung, T. Kawanago, K. Kakushima, H. Iwai

Année:

2008

Langue:

english

Fichier:

PDF, 568 KB

english, 2008

40

[IEEE IEEE Conference Record - Abstracts. 2005 IEEE International Conference on Plasma Science - Monterey, CA, USA (2005.06.20-2005.06.23)] IEEE Conference Record - Abstracts. 2005 IEEE International Conference on Plasma Science - Laser Plasma Interaction Experiments at Utsunomiya University

Yugami, Noboru, Ohata, Nobuo, Matsushita, Wataru, Ninomiya, Ken'ichi, Kawanago, Hirosh

Année:

2005

Langue:

english

Fichier:

PDF, 1.07 MB

english, 2005

41

[IEEE 2009 IEEE International Reliability Physics Symposium (IRPS) - Montreal, QC, Canada (2009.04.26-2009.04.30)] 2009 IEEE International Reliability Physics Symposium - Real-time observation of trap generation by scanning tunneling microscopy and the correlation to high-κ gate stack breakdown

Ong, Y. C., Ang, D. S., Pey, K. L., O'Shea, S. J., Kakushima, K., Kawanago, T., Iwai, H., Tung, C. H.

Année:

2009

Langue:

english

Fichier:

PDF, 410 KB

english, 2009

42

[IEEE IEEE 2000 Custom Integrated Circuits Conference - Orlando, FL, USA (21-24 May 2000)] Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044) - A 9-M tr. access network system-on-a-chip for mega-bit Internet access at home

Kozu, S., Aramaki, T., Ikeda, C., Kuroda, Y., Kawanago, S., Okada, M., Kariya, H., Manabe, M., Utani, H., Sudou, E., Oda, Y., Suzuki, H.

Année:

2000

Langue:

english

Fichier:

PDF, 375 KB

english, 2000

43

[IEEE ESSDERC 2013 - 43rd European Solid State Device Research Conference - Bucharest, Romania (2013.09.16-2013.09.20)] 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) - Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT

Kawanago, T., Kakushima, K., Kataoka, Y., Nishiyama, A., Sugii, N., Wakabayashi, H., Tsutsui, K., Natori, K., Iwai, H.

Année:

2013

Langue:

english

Fichier:

PDF, 532 KB

english, 2013

44

[IEEE 1992 Symposium on VLSI Circuits Digest of Technical Papers - Seattle, WA, USA (4-6 June 1992)] 1992 Symposium on VLSI Circuits Digest of Technical Papers - A 1.28 Gbps 16*16 CMOS chip set for an output-buffer ATM switch

Sugaya, N., Nagano, H., Morita, T., Kawanago, S., Kuriki, R., Sakamoto, M., Suzuki, T.

Année:

1992

Langue:

english

Fichier:

PDF, 178 KB

english, 1992

45

[IEEE ESSDERC 2012 - 42nd European Solid State Device Research Conference - Bordeaux, France (2012.09.17-2012.09.21)] 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC) - (100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture

Kawanago, T., Kakushima, K., Ahmet, P., Kataoka, Y., Nishiyama, A., Sugii, N., Tsutsui, K., Natori, K., Hattori, T., Iwai, H.

Année:

2012

Langue:

english

Fichier:

PDF, 458 KB

english, 2012

46

[IEEE 2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference - Munich, Germany (2007.06.17-2007.06.22)] 2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference - High power, 1-THz source based on a femtosecond laser-pumped DC to AC Radiation Converter scheme

Ohata, Nobuo, Li, Kun, Kawanago, Hiroshi, Yaegashi, Kenta, Higashiguchi, Takeshi, Yugami, Noboru

Année:

2007

Langue:

english

Fichier:

PDF, 70 KB

english, 2007

47

Dietary branched-chain amino acid supplementation affects growth and hepatic insulin-like growth factor gene expression in yellowtail, Seriola quinqueradiata

Kawanago, M., Takemura, S., Ishizuka, R., Shioya, I.

Journal:

Aquaculture Nutrition

Année:

2015

Langue:

english

Fichier:

PDF, 995 KB

english, 2015

48

Interface and electrical properties of Tm2O3 gate dielectrics for gate oxide scaling in MOS devices

Kouda, M., Kawanago, T., Ahmet, P., Natori, K., Hattori, T., Iwai, H., Kakushima, K., Nishiyama, A., Sugii, N., Tsutsui, K.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Année:

2011

Langue:

english

Fichier:

PDF, 1.12 MB

english, 2011

49

Leucine Affects Growth and Hepatic Growth-Related Factor Gene Expression in Japanese Amberjack Seriola quinqueradiata

Kawanago, M., Takemura, S., Ishizuka, R., Kousaka, T., Shioya, I.

Journal:

North American Journal of Aquaculture

Année:

2014

Langue:

english

Fichier:

PDF, 195 KB

english, 2014

50

ECS Transactions [ECS China Semiconductor Technology International Conference 2011 (CSTIC 2011) - Shanghai, China (March 13 - March 14, 2011)] - TiN/W/La

Ahmet, Parhat, Kitayama, D., Kaneda, T., Suzuki, T., Koyanagi, T., Kouda, M., Mamatrishat, M., Kawanago, T., Kakushima, Kuniyuki, Tsutsui, Kazuo, Nishiyama, Akira, Sugii, Nobuyuki, Natori, Kenji, Hatt

Année:

2011

Langue:

english

Fichier:

PDF, 222 KB

english, 2011